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  • SICTECH MHD silicon carbide heating element adopts the latest heating technology at China and abroad. The maximum temperature can reach 1625 degrees Celsius. It has high density and low porosity. It can effectively resist the erosion of harmful gases, water vapor and metal oxides. Aging speed, longer use time, reduced replacement frequency, lowering production cost for users, suitable for demanding sites such as glass, electronics and precious metal materials.
    Huanneng SICTECH silicon carbide heating element can provide a variety of heating body materials and structures, hollow tubular heating elements, solid heating elements, spiral heating elements, and can be designed according to customer requirements. SICTECH silicon carbide heating element can also provide a variety of surface coatings according to various furnace production environments; it can effectively block volatile gases such as water vapor, nitrogen, hydrogen, alkaline gases, metal oxides, etc., effectively reducing the erosion of silicon carbide heating element by harmful gas volatiles .

    Physical Characteristics

       

    Characteristics Items

    Unit

    Type

    GD/U/W

    HGD

    LS/LD

    Pretension Density

    3.2

    3.2

    3.1

    Bulk Density

    2.5

    2.58

    2.8

    Apparent Porosity

    %

    23

    20

    5

    Bending Strength

    MPa at 25℃

    50

    60

    98

    Specific Heat

    kj/kg+℃ at 25℃-1300℃

    1.0

    1.0

    1.0

    Heat Conductivity

    W/m+℃ at 1000℃

    12-18

    14-19

    16-21

    Nominal Resistance

    Ω cm at 1000℃

    0.08

    0.1

    0.016

    Coefficient of Thermal Expansion

    1000℃(X 10-6/℃)

    4.5

    4.5

    4.5